Surface Analysis

A wide array of instrumentation is available to enable elemental and chemical analysis of surfaces and near-surface regions. In addition, depth profiling, elemental image mapping, and micro-area analysis extend the capabilities of many of these techniques. Elemental and chemical analysis is achieved through the use of Auger Electron Spectroscopy, Secondary Ion Mass Spectroscopy, and X-ray Photoelectron Spectroscopy.

Phi Multiprobe System

The Multiprobe includes a 595 Scanning Auger Electron Spectrometer, a Secondary Electron Detector for imaging, a quadrupole Secondary Ion Mass Spectrometer with oxygen injection, a doublepass non-scanning Auger Electron Spectrometer, a twin anode X-ray Photoelectron Spectrometer, and two Argon Ion Sputter Guns all within one ultra-high vacuum system.

VG X-ray Photoelectron Spectrometer

This system includes a liquid nitrogen cooled fracture stage, heating/gas reaction chamber, two twin anodes and one monochromatic X-ray sources, electron charge neutralization, and two duo-plasmatron ion sputter guns.

Phi Model 590 Scanning Auger Electron Spectrometer

with Argon Ion Sputter Gun for depth profiling

5300 Perkin Elmer X-ray photon spectrometer

with monochromatic x-ray source with ion sputter gun.

Zygo 3-D Optical Scanning Interferometer

Provides graphic images and high-resolution numerical analysis to characterize the surface structure of materials and has the imaging capability of depths up to 100 micrometers with 0.1 nm resolution and 0.4 RMS repeatability independent of objective magnification.

Varian CF-3000 Ion Implanter

This instrument is available for modifying the near-surface regions of materials, creating composition reference samples/standards for the various analysis techniques, and surface modified materials for numerous applications. Ion implantation offers the benefit of precisely modifying the elemental composition of the surface region of materials at room temperature. Precise composition changes are achieved through use of a 'dose processor' which controls ion dose from as little as parts-per-million up to as much as 30-50 atomic percent (depending on the material and ions used).

2x- MeV Van de Graaff

This electron accelerator is available primarily for surface analysis by Rutherford backscattering, channeling, nuclear reaction profiling and other accelerator-based techniques.