Ali Gokirmak

Associate Professor

Department of Electrical and Computer Engineering


Education

  • Ph.D., Electrical & Computer Engineering, Cornell University, 2005
  • B.S., Electrical Engineering and Physics, University of Maryland at College Park, 1998

Research Focus

  • Applications of nanostructures
  • Nanofabrication technology
  • Small-scale MOSFET’s for sensors, logic and non-volatile memories
  • Quantum confinement effects in restricted geometries in MOSFET’s
  • Phase change memory (PCM)
  • Thermoelectric effects
  • Current induced crystallization

Publications

R. Khan, A. H. Talukder, F. Dirisaglik, H. Silva, A. Gokirmak, Accelerating and Stopping Resistance Drift in Phase Change Memory Cells via High Electric Field Stress, arXiv preprint

J. Scoggin, H. Silva, A. Gokirmak, Field Dependent Conductivity and Threshold Switching in Amorphous Chalcogenides–Modeling and Simulations of Ovonic Threshold Switches and Phase Change Memory Devices, arXiv preprint

N. Noor, S. Muneer, R. Khan, A. Gorbenko, H. Silva, Amorphized Length and Variability in Phase Change Memory Line Cells, www.beilstein-archives.org/xiv/preprints/202058, under review. 

R. Khan, F. Dirisaglik, A. Gokirmak, H. Silva, Resistance drift in Ge2Sb2Te5 phase change memory line cells at low temperatures and its response to photoexcitation, Applied Physics Letters. 116 (25), 253501 (2020).

A. Cywar, Z. Woods, S. Kim, M. BrightSky, N. Sosa, Y. Zhu, H. S. Kim, H. K. Kim, C. Lam, A. Gokirmak, H. Silva, Modeling of void formation in phase change memory devices, Solid-State Electronics, 164, 107684 (2020).

S. Tripathi, P. Kotula, M. Singh, C. Ghosh, G. Bakan, H. Silva, C. B. Carter, C Barry, Role of oxygen on chemical segregation in uncapped Ge2Sb2Te5 thin films on silicon nitride, ECS Journal of Solid State Science and Technology, in press https://doi.org/10.1149/2162- 8777/ab9a19 (2020).

J. Scoggin, Z. Woods, H. Silva, A. Gokirmak, Modeling heterogeneous melting in phase change memory devices, Applied Physics Letters 114, 043502 (2019).

S. Muneer, J. Scoggin, F. Dirisaglik, L. Adnane, A. Cywar, G. Bakan, K. Cil, C. Lam, H. Silva, and A. Gokirmak. “Activation energy of metastable amorphous Ge2Sb2Te5 from room temperature to meltAIP Advances 8, no. 6, 065314 (2018).

J. Scoggin, R. Khan, H. Silva, and A. Gokirmak. “Modeling and impacts of the latent heat of phase change and specific heat for phase change materials.” Applied Physics Letters 112, no. 19, 193502 (2018).

M. Akbulut , F. Dirisaglik, A. Cywar, A. Faraclas, D. Pence, J. Patel, S. Steen, R. Nunes, H. Silva, and A. Gokirmak, “Nanoscale Accumulated Body Si nMOSFETs,” IEEE Trans. Electron Devices 65, no. 4, 1283-1289 (2018).

full publication list

Ali Gokirmak
Contact Information
Emailali.gokirmak@uconn.edu
Phone860-486-9425
Mailing Address371 Fairfield Way, Storrs, Connecticut 06269
Office LocationInformation Technology Engineering (ITE)
CampusStorrs
Linkhttps://electron.engr.uconn.edu/