Helena Silva

Professor

Department of Electrical and Computer Engineering

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Education

• Ph.D. Applied Physics, Cornell University, 2005
• M.S. Applied Physics, Cornell University, 2002
• Lic., Engineering Physics, Universidade Tecnica de Lisboa, 1998

Research Focus

• Nanoelectronic devices
• Electronic and thermal transport at small scales
• Non-volatile memory devices
• Large area electronics, solar cells
• Light emitting devices
• Nanofabrication techniques

Publications

R. Khan, A. H. Talukder, F. Dirisaglik, H. Silva, A. Gokirmak, Accelerating and Stopping Resistance Drift in Phase Change Memory Cells via High Electric Field Stress, arXiv preprint arXiv:2002.12487

J. Scoggin, H. Silva, A. Gokirmak, Field Dependent Conductivity and Threshold Switching in Amorphous Chalcogenides–Modeling and Simulations of Ovonic Threshold Switches and Phase Change Memory Devices, arXiv preprint arXiv:1906.09316, under revision

N. Noor, S. Muneer, R. Khan, A. Gorbenko, H. Silva, Amorphized Length and Variability in Phase Change Memory Line Cells, www.beilstein-archives.org/xiv/preprints/202058, under review. 

R. Khan, F. Dirisaglik, A. Gokirmak, H. Silva, Resistance drift in Ge2Sb2Te5 phase change memory line cells at low temperatures and its response to photoexcitation, Applied Physics Letters. 116 (25), 253501 (2020).

A. Cywar, Z. Woods, S. Kim, M. BrightSky, N. Sosa, Y. Zhu, H. S. Kim, H. K. Kim, C. Lam, A. Gokirmak, H. Silva, Modeling of void formation in phase change memory devices, Solid-State Electronics, 164, 107684 (2020).

S. Tripathi, P. Kotula, M. Singh, C. Ghosh, G. Bakan, H. Silva, C. B. Carter, C Barry, Role of oxygen on chemical segregation in uncapped Ge2Sb2Te5 thin films on silicon nitride, ECS Journal of Solid State Science and Technology, in press https://doi.org/10.1149/2162- 8777/ab9a19 (2020).

J. Scoggin, Z. Woods, H. Silva, A. Gokirmak, Modeling heterogeneous melting in phase change memory devices, Applied Physics Letters 114, 043502 (2019).

S. Muneer, J. Scoggin, F. Dirisaglik, L. Adnane, A. Cywar, G. Bakan, K. Cil, C. Lam, H. Silva, and A. Gokirmak. “Activation energy of metastable amorphous Ge2Sb2Te5 from room temperature to melt” AIP Advances 8, no. 6, 065314 (2018).

J. Scoggin, R. Khan, H. Silva, and A. Gokirmak. “Modeling and impacts of the latent heat of phase change and specific heat for phase change materials.” Applied Physics Letters 112, no. 19, 193502 (2018).

M. Akbulut , F. Dirisaglik, A. Cywar, A. Faraclas, D. Pence, J. Patel, S. Steen, R. Nunes, H. Silva, and A. Gokirmak, “Nanoscale Accumulated Body Si nMOSFETs,” IEEE Trans. Electron Devices 65, no. 4, 1283-1289 (2018).

L. Adnane, F. Dirisaglik, A. Cywar, K. Cil, Y. Zhu, C. Lam, A. F. M. Anwar, A. Gokirmak, and H. Silva, “High temperature electrical resistivity and Seebeck coefficient of Ge2Sb2Te5 thin films,” J. Appl. Phys. 122, 125104 (2017).

Z. Woods, J. Scoggin, A. Cywar, L. Adnane, and A. Gokirmak, “Modeling of Phase-Change Memory: Nucleation, Growth, and Amorphization Dynamics During Set and Reset: Part II–Discrete Grains,” IEEE Trans. Electron Devices 64, no. 11, 4472-4478 (2017).

Z. Woods and A. Gokirmak, “Modeling of Phase-Change Memory: Nucleation, Growth, and Amorphization Dynamics During Set and Reset: Part I–Effective Media Approximation,” IEEE Trans. Electron Devices 64, no. 11, 4466-4471  (2017).

A. Deschenes, S. Muneer, M. Akbulut, A. Gokirmak and H. Silva,  “Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory,” Beilstein Journal of Nanotechnoly 7, 1676–1683 (2016).